| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a GaAs single crystal for improving the yield of the acquisition number of wafers, by appropriately controlling the rotation number of a crucible and the pulling speed of a pulling shaft. Ž<P>SOLUTION: The crucible 5 storing a GaAs raw material and boron trioxide as a sealant is placed in a chamber 2 charged with inert gas. The crucible 5 is heated by a heater 8 to produce a GaAs melt 9 in the crucible 5. A seed crystal 7 attached to the lower end of a pulling shaft 3 is brought into contact with the GaAs melt 9 and the seed crystal 7 is pulled while rotating the crucible 5 to produce a GaAs single crystal 10. The rotation number n [rpm] of the crucible 5 and the pulling speed V [mm/h] of the pulling shaft 3 are controlled to satisfy 28≥n≥5.89e<SP>0.07V</SP>. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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