发明名称 PATTERNING PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To provide a patterning process which ensures increased resolution property and process margin and high throughput, does not require an etching device for dry development, and achieves resolution comparable to that by double dipole lithography. <P>SOLUTION: The patterning process using positive/negative reversal includes: applying a chemically amplified positive resist material comprising a resin comprising acid labile group-containing repeating units, a photoacid generator or this generator and a thermal acid generator, and an organic solvent onto a substrate to be processed, and removing the solvent to form a resist film; exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, heating it to bring the acid labile groups into elimination reaction, and developing it to form a positive pattern; illuminating or heating the positive pattern to eliminate the acid labile groups for increasing alkali solubility and to induce crosslinking for imparting organic solvent resistance; forming a reversal film from a reversal film forming composition; and dissolving away the positive pattern in an alkaline wet etchant. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010164753(A) 申请公布日期 2010.07.29
申请号 JP20090006574 申请日期 2009.01.15
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 HATAKEYAMA JUN;YOSHIHARA TAKAO;KATAYAMA KAZUHIRO
分类号 G03F7/40;G03F1/32;G03F1/54;G03F1/70;G03F7/004;G03F7/039;G03F7/11;G03F7/38;H01L21/027 主分类号 G03F7/40
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