| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a compound semiconductor single crystal which is high in the yield of single crystallization by decreasing the temperature fluctuations in a horizontal direction of a crucible and its production method. SOLUTION: The apparatus comprises the crucible for containing at least compound semiconductor raw material 5 and a heater 3, 4 for heating and melting the raw material 5 in the crucible in a high-pressure vessel 1 and produces the compound semiconductor single crystal by gradually cooling and solidifying the raw material melt subjected to heating and melting from the lower part or the upper part of the melt. The heater 3, 4 regulated in the bore (D) of the heater 3, 4 to 1.5-3.0 times (D/d=1.5-3.0) with respect to the bore (d) of the crucible is used. COPYRIGHT: (C)2010,JPO&INPIT
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