METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR, METHOD FOR FABRICATING NITRIDE-BASED SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING EPITAXIAL WAFER

摘要

Provided is a method for fabricating a p-type gallium nitride-based semiconductor capable of providing a gallium nitride-based semiconductor containing a p-type dopant without activation annealing. A GaN-based semiconductor region (17) containing the p-type dopant is formed above a support (13) in a growth furnace (10). The GaN-based semiconductor layer (17) is grown on a GaN-based semiconductor layer (15) by supplying an organometallic material and ammonia to the growth furnace (10). The GaN-based semiconductor is doped with the p-type dopant, and magnesium is an example of the p-type dopant. After the GaN-based semiconductor regions (15, 17) are formed, an atmosphere (19) containing at least either monomethylamine or monoethylamine is formed in the growth furnace (10). After the atmosphere (19) is provided, the substrate temperature is decreased from the growth temperature of the GaN-based semiconductor region (17). When film formation is completed and the substrate temperature is decreased to close to a room temperature, the fabrication of a p-type GaN-based semiconductor (17a) and an epitaxial wafer (E) is completed.