发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF DESIGNING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DESIGN APPARATUS, AND PROGRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent uneven heat distribution from occurring within a semiconductor substrate in a lamp annealing process. Ž<P>SOLUTION: A method of designing a semiconductor device includes: a step S10 of disposing impurity diffusion layer regions and an element isolation film on a semiconductor substrate; a step S20 of partitioning the semiconductor substrate into multiple areas in predetermined area units of 1 mm<SP>2</SP>or greater; a step S30 of calculating the area ratio T of an impurity diffusion layer region to the element isolation film in each of the multiple areas; a step S40 of selecting areas that have a calculated area ratio out of a reference range as areas to be corrected; and a step S50 of disposing a dummy impurity diffusion layer region in each of the areas to be corrected so that its area ratio T falls within the reference range. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010141130(A) |
申请公布日期 |
2010.06.24 |
申请号 |
JP20080315999 |
申请日期 |
2008.12.11 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
MARUYAMA SHINYA |
分类号 |
H01L21/82;G06F17/50;H01L21/26 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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