PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A phase-change memory device is provided to have same voltage level as the voltage level applied to a word line by discharging a bit line before a writing operation and read-out operation. CONSTITUTION: A phase-change memory cell array(110) comprises a plurality of diode type phase-change memory cells arranged in a array pattern. A word line(WL1,WL2) is connected to a first end of a plurality of diode type phase-change memory cells. Bit lines are vertically arranged to the word lines. A bit line(BL1,BL2) is connected to the second end of a plurality of diode type phase-change memory cells. A discharge part(131,132) connects or discharges a plurality of bit lines to the discharge voltage.