| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor deposition raw material for forming a silica film, by splashless or suppressing the occurrence of splash and achieving high speed film-deposition, and to provide a method of preparing the same. Ž<P>SOLUTION: The vapor deposition raw material is a porous silicon oxide having >1.2 g/cm<SP>3</SP>and ≤1.6 g/cm<SP>3</SP>bulk density, wherein (x) of SiO<SB>x</SB>is >1 and ≤1.3. As the raw material, silicon oxide in which a peak surface area assigned to bonding energy equivalent to valency of silicon of 1-3 in Si2P spectrum by X-ray photoelectron spectroscop (XPS) is ≥10% of total surface area including metal silicon and silicon dioxide is suitably used. The raw material is pulverized and fired at 800-1,100°C to prepare the vapor deposition raw material. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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