发明名称 METHOD FOR MANUFACTURING CHALCOGEN COMPOUND POWDER
摘要 <P>PROBLEM TO BE SOLVED: To solve problems that a ligand is required to be changed depending on the kind of a metal to form a metallic complex in a method using the ligand in the production of a chalcogen compound, and the process is difficult when a nano-crystal is ternary or quaternary one; that waste water containing the ligand causes trouble; and that a CuInSe-based compound is not formed in a single phase, e.g. in a state of a metal hydroxide obtained by co-precipitating hydroxide of Cu and In from Cu(NO<SB>3</SB>)<SB>2</SB>or In(NO<SB>3</SB>)<SB>3</SB>of nitrate with an ammonia aqueous solution or in a state of an oxide after dehydration reaction, the metal oxide is locally generated in a reaction to form chalcogen when a temperature is raised to the reaction temperature in a high boilng point solvent. <P>SOLUTION: A nanoparticle of the chalcogen compound containing the ternary or quaternary one (a compound comprising one or more kinds of metal elements and one or more kinds of elements selected from Se, S and Te as structural elements) is obtained by adding a chalcogen source containing one or more kinds of a hydroxide, an oxide and an oxalate and one or more kinds of Se, Te and S into a reducing solvent and heating to &ge;200&deg;C. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010105887(A) 申请公布日期 2010.05.13
申请号 JP20080281793 申请日期 2008.10.31
申请人 DOWA ELECTRONICS MATERIALS CO LTD 发明人 TAGAMI KOJI;ISHIKAWA YUICHI;FUJINO TAKEAKI
分类号 C01B19/04;C01B17/20;H01L31/04 主分类号 C01B19/04
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