SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD, AND LIGHT-EMITTING DEVICE

摘要

Disclosed is a semiconductor light-emitting element, manufacturing method, and light-emitting device having an improved light emission efficiency.  The semiconductor light-emitting element (1) includes a light-emitting layer (2) having a layered structure in which a p-type GaN film (24) and an n-type GaN film (22) are formed, a conductive hexagonal pyramid base (3) made from ZnO and mounted with the light-emitting layer on its bottom (31), an anode (5) joined to the bottom (31) of the base (3) at the position away from the light-emitting layer (2), and a cathode (4) mounted on the light-emitting layer (2).  The p-type GaN film (24) is joined to the bottom (31) of the base (3), and the cathode (4) is joined on an N-polar surface of the n-type GaN film (22) opposite to the p-type GaN film (24).  The N-polar surface has a microrecess structure (22c) in the area other than the area where the cathode (4) is joined.