HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABLE CUTOFF WAVELENGTH
摘要
<p>A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.</p>
申请公布号
WO2010036956(A1)
申请公布日期
2010.04.01
申请号
WO2009US58472
申请日期
2009.09.25
申请人
CALIFORNIA INSTITUTE OF TECHNOLOGY;TING, DAVID, Z.;HILL, CORY, J.;SOIBEL, ALEXANDER;BANDARA, SUMITH, V.;GUNAPALA, SARATH, D.
发明人
TING, DAVID, Z.;HILL, CORY, J.;SOIBEL, ALEXANDER;BANDARA, SUMITH, V.;GUNAPALA, SARATH, D.