发明名称 |
Field effect transistor structure with abrupt source/drain junctions |
摘要 |
Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain extensions includes forming a passivated recess which is back filled by epitaxial deposition of doped material to form the source/drain junctions. The recesses include a laterally extending region that underlies a portion of the gate structure. Such a lateral extension may underlie a sidewall spacer adjacent to the vertical sidewalls of the gate electrode, or may extend further into the channel portion of a FET such that the lateral recess underlies the gate electrode portion of the gate structure. In one embodiment the recess is back filled by an in-situ epitaxial deposition of a bilayer of oppositely doped material. In this way, a very abrupt junction is achieved that provides a relatively low resistance source/drain extension and further provides good off-state subthreshold leakage characteristics. Alternative embodiments can be implemented with a back filled recess of a single conductivity type.
|
申请公布号 |
US7682916(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20080231172 |
申请日期 |
2008.08.28 |
申请人 |
|
发明人 |
MURTHY ANAND S.;CHAU ROBERT S.;MORROW PATRICK;JAN CHIA-HONG;PACKAN PAUL |
分类号 |
H01L21/336;H01L29/78;H01L21/20;H01L29/08;H01L29/10;H01L29/16;H01L29/161;H01L29/417 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|