| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve a complete protection of side surfaces of a silicon substrate and to prevent a low dielectric constant film from being peeled off in a method of manufacturing a semiconductor device having a low dielectric constant film wiring laminated structure part including a laminated structure of the silicon substrate, the low dielectric constant film and the wiring which are formed on the silicon substrate. <P>SOLUTION: On the upper surface of the silicon substrate 1, the low dielectric constant film wiring laminated structure part 3 including the laminated structure of the low dielectric constant film 4 and the wiring 5 is formed so that its side surfaces are substantially flush with the side surfaces of the silicon substrate 1. The circumferential side surfaces of the silicon substrate 1 and the low dielectric constant film wiring laminated structure part 3 are completely covered with a sealing film 15. Thus, in the structure, the low dielectric constant film 4 can hardly be peeled off and the side surfaces of the silicon substrate 1 can be completely protected against cracks or the like. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
