发明名称 |
Silicide block isolated junction field effect transistor source, drain and gate |
摘要 |
An junction field effect transistor (JFET) is fashioned with a patterned layer of silicide block (SBLK) material utilized in forming gate, source and drain regions. Utilizing the silicide block in this manner helps to reduce low-frequency (flicker) noise associated with the JFET by suppressing the impact of surface states, among other things.
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申请公布号 |
US7670890(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20060493229 |
申请日期 |
2006.07.26 |
申请人 |
TEXAS INSTRUMENTS DEUTSCHLAND GMBH;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EL-KAREH BADIH;YASUDA HIROSHI;BALSTER SCOTT GERARD;STEINMANN PHILIPP;TROGOLO JOE R. |
分类号 |
H01L29/80;H01L21/337 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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