SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a normally-off type junction FET reducing a channel resistance without decreasing a withstand voltage. SOLUTION: An impurity concentration of a channel region (a second epitaxial layer 3) of the junction FET formed with the use of a substrate 1 comprising a silicon carbide is higher than that of a first epitaxial layer 2 to be a drift layer. The channel region is formed by a region 7A with a constant channel width and a region 7B with a channel width becoming broader toward the drain (the substrate 1) side under the region 7A. The boundary between the first epitaxial layer 2 and the channel region is positioned at the region 7B with the channel width becoming broader toward the drain (the substrate 1) side. COPYRIGHT: (C)2010,JPO&INPIT