发明名称 METAL OXIDE THIN FILM AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a metal oxide thin film having high film density and high film hardness, and a manufacturing method thereof with high film deposition rate. <P>SOLUTION: In the manufacturing method of the metal oxide thin film, the metal oxide thin film is formed on a base material when reactive gas becomes in a plasma state by applying the high frequency voltage between two electrodes facing each other and executing the discharge in a reactive space under the atmospheric pressure or under the pressure in a vicinity of the atmospheric pressure, and a base material is exposed to reactive gas in the plasma state. Acid having the acid dissociation constant pKa of &le;3.5 is introduced in the reactive space. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010031303(A) 申请公布日期 2010.02.12
申请号 JP20080192039 申请日期 2008.07.25
申请人 KONICA MINOLTA HOLDINGS INC 发明人 NAKAGUCHI TOMOKO
分类号 C23C16/40;H01L21/316;H05H1/24 主分类号 C23C16/40
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