| 摘要 |
PROBLEM TO BE SOLVED: To follow a high frequency when a decoupling capacitance is formed between a first conductive well and a second conductive well that are formed on a substrate. SOLUTION: A semiconductor device 100 includes an embedded P-well 104 formed on a P-type substrate 102, and a plurality of P-wells 106 and N-wells 108 which are formed alternately on the P-well to be adjacent to each other. A region where each N-well 108 is in contact with the embedded P-well 104 has a width of≤2μm. A ground voltage and a power voltage are applied to the P-wells 106 and N-wells 108, respectively. A decoupling capacitance is formed between the N-wells 108 and the embedded P-well 104. COPYRIGHT: (C)2010,JPO&INPIT |
