| 摘要 |
Disclosed is a magnetoresistive random access memory ("MRAM") device comprising a plurality of layers on a substrate. The plurality of layers comprises pinning layers, flipping layers, and at least one insulating layer between the pinning layers and the flipping layers. An eddy current side wall encapsulates at least the pinning layers of the plurality of layers. The eddy current side wall comprises a grain insulating layer for electrical insulation, and a magnetic barrier layer for magnetic isolation.
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