发明名称 |
DISCRETE SEMICONDUCTOR DEVICE AND METHOD OF FORMING SEALED TRENCH JUNCTION TERMINATION |
摘要 |
<p>A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.</p> |
申请公布号 |
WO2010014507(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
WO2009US51650 |
申请日期 |
2009.07.24 |
申请人 |
TRION TECHNOLOGY, INC.;BOWMAN, RONALD, R. |
发明人 |
BOWMAN, RONALD, R. |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|