发明名称 SEMICONDUCTOR DEVICE HAVING FUSE AND FABRICATING METHOD OF THE SAME
摘要 PURPOSE: A semiconductor device having a fuse and fabricating method of the same is provided to improve the production yield by allow being repaired in a wafer level state and package state. CONSTITUTION: A fuse regions(FUSE) is arranged on a substrate(10). A first oxide film(12) is formed by oxidizing a part of a substrate of the fuse regions. A second oxide film(13) is formed on the substrate of the fuse regions in which the first oxide film is not formed. An anti fuse insulating layer is formed on the first and the second oxide film. A conductive film is formed on the anti-fuse insulating layer.
申请公布号 KR20100010724(A) 申请公布日期 2010.02.02
申请号 KR20080071727 申请日期 2008.07.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, SUN HWA
分类号 H01L21/82 主分类号 H01L21/82
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