发明名称 POWER SEMICONDUCTOR DEVICE
摘要 A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern.
申请公布号 US2010013086(A1) 申请公布日期 2010.01.21
申请号 US20090504250 申请日期 2009.07.16
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 OBIRAKI YOSHIKO;OKA SEIJI;USUI OSAMU;NAKAYAMA YASUSHI;OI TAKESHI
分类号 H01L23/52;H01L23/367;H01L23/488 主分类号 H01L23/52
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