发明名称 Ferroelectric capacitor and ferroelectric memory
摘要 A ferroelectric capacitor includes: a base substrate; a buffer layer formed above the base substrate; a lower electrode formed above the buffer layer; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein the buffer layer includes titanium (Ti) and cobalt (Co) as metal elements, and a metal element ratio x is 0.05<=x<1, when Ti:Co=1-x:x.
申请公布号 US7646073(B2) 申请公布日期 2010.01.12
申请号 US20070680111 申请日期 2007.02.28
申请人 SEIKO EPSON CORPORATION 发明人 HAMADA YASUAKI
分类号 H01L29/00 主分类号 H01L29/00
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