| 摘要 |
PURPOSE: A method for forming a pattern of a semiconductor device using a spacer is provided to suppress the lowering of stability due to misalignment by preventing the misalignment between a line pattern and a pad pattern in a pattering process using the spacer. CONSTITUTION: A pattern object layer is formed on a substrate(100) including a first region(200) and a second region(201). First film patterns are formed on the pattern object layer of the first region. Second sacrificial film patterns are formed on the pattern object layer of the second region. A first spacer(130) is formed on a sidewall of the first sacrificial film pattern. A second spacer(131) is formed on the sidewall of the second sacrificial film pattern. The first and second spacers are formed on sidewalls of the first and second sacrificial film patterns. After forming the first and second spacers, the first and second sacrificial film patterns are removed from the substrate. A first mask pattern to expose the end of the first spacer is formed while covering the second spacer. The first spacer with a ling shape is formed on the first region by removing the end of the first spacer exposed by the first mask pattern. The first mask pattern is removed. A second mask pattern covering the pattern object layer exposed in the second spacer of the second region is formed. A pad pattern is formed on the second region and a line pattern is formed on the first region by etching the exposed pattern object layer.
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