MEMORY ELEMENT, SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a memory element improved in the reliability by enlarging a memory window. SOLUTION: A memory element includes: a semiconductor layer that is provided on a support substrate; a channel region that is provided in the semiconductor layer; two diffusion layer regions of a first conductivity type that are provided on both sides of the channel region and are located in the semiconductor layer; a first gate insulation film that is provided on the channel region and has a charge accumulation function; and a first gate electrode that is provided on the first gate insulation film. The memory element further includes: a second gate insulation film that is adjacent to the ends of the channel region in the channel width direction and is provided on the semiconductor layer outside the channel region; and a second gate electrode that is provided on the second gate insulation film and is electrically insulated from the first gate electrode. COPYRIGHT: (C)2010,JPO&INPIT