| 摘要 |
A solid-state imaging device has pixels in matrix on a semiconductor substrate. Each pixel is provided with a photodiode which performs photoelectric conversion to incoming light, a read transistor for reading a signal charge from the photodiode, and a floating diffusion region for converting the read signal charge into a voltage. A p-type well under an n-type formed layer of the photodiode is arranged at a position separated from a substrate surface on the side of the photodiode, and the p-type well under the read transistor is formed to reach the surface of the semiconductor substrate.
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