Method of growing crystal of compound semiconductor and method of manufacturing compound semiconductor device,申请号EP20050002942-传众专利搜索

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发明名称	Method of growing crystal of compound semiconductor and method of manufacturing compound semiconductor device
摘要
申请公布号	EP1564795(A3)	申请公布日期	2009.12.02
申请号	EP20050002942	申请日期	2005.02.11
申请人	SEIKO EPSON CORPORATION	发明人	NISHIDA, TETSUO
分类号	H01L21/205;C30B25/02;C30B25/14;C30B29/40;H01S5/323	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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