发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which has a wide process window in contact hole formation, and can suppress pit formation during flow baking, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises: (A) a resin that increases the solubility to developer by the action of an acid and includes (a) a repeating unit containing a group that is decomposed by the action of an acid to become alkali-soluble, (b) a repeating unit containing an alicyclic lactone structure, (c) a repeating unit containing an alicyclic structure substituted with a hydroxy group and (d) a methacrylic acid repeating unit, wherein the amount of the methacrylic acid repeating unit is from 5 to 18% by mole based on the total repeating units of the resin; and (B) a compound that generates an acid upon exposure to active ray or radiant ray. The pattern forming method uses the composition. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009271540(A) 申请公布日期 2009.11.19
申请号 JP20090146407 申请日期 2009.06.19
申请人 FUJIFILM CORP 发明人 SATO KENICHIRO
分类号 G03F7/039;C08F220/28;H01L21/027 主分类号 G03F7/039
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