| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing nickel silicide nano-wires. Ž<P>SOLUTION: The method for manufacturing nickel silicide nano-wires includes: a first step of providing a silicon substrate with a silicon dioxide layer formed on a surface thereof; a second step of forming a titanium layer on a surface of the silicon dioxide layer formed on the silicon substrate; a third step of providing a growing device, placing the silicon substrate with the formed titanium layer into the growing device, and heating the growing device to 500-1,000°C; and a fourth step of forming nickel clusters onto the surface of the silicon substrate and growing nickel silicide nano-wires. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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