发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To form a favorable line pattern when microfabricating width dimensions of a line and a space using a sidewall imprint technology. Ž<P>SOLUTION: A method of manufacturing a semiconductor device includes: a process which forms a sacrificial film 5 on a workpiece 4; a process which forms a resist film 6 in which a line and space pattern having a ratio of a line width and a space width on 1:1 basis has been patterned on the sacrificial film 5; a process which carries out the slimming of the resist film 6 and sets a line width dimension to one third of a space width dimension; a process which removes the resist film 6 after processing the sacrificial film 5 with the resist film 6 as a mask; a process which forms a sidewall film 9 on a sidewall of a line of a line and space pattern of the sacrificial film 5; a process which forms a frame-like protective pattern so as to surround a line pattern of the sidewall film 9 after removing the sacrificial film 5; and a process which processes the workpiece 4 with the line pattern and the protective pattern as masks. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2009252954(A) |
申请公布日期 |
2009.10.29 |
申请号 |
JP20080098206 |
申请日期 |
2008.04.04 |
申请人 |
TOSHIBA CORP |
发明人 |
INOUE DAINA;KAWABATA ITARU |
分类号 |
H01L21/76;H01L21/027;H01L21/3065 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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地址 |
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