| 摘要 |
According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistivity changing memory cells connected in parallel is provided. The method includes: choosing a resistivity changing memory cell having a first memory state out of the plurality of resistivity changing memory cells; measuring a first total resistance of the plurality of resistivity changing memory cells; setting the chosen resistivity changing memory cell to a second memory state, measuring a second total resistance of the plurality of resistivity changing memory cells; and determining the first memory state of the chosen resistivity changing memory cell in dependence on the first total resistance and the second total resistance.
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