| 摘要 |
Provided is a semiconductor device manufacturing method by which plasma processing can be performed uniformly on a substrate. A plasma processing apparatus according to one embodiment of the present invention includes an auxiliary electrode provided annularly along a periphery of the lower electrode on a lateral side of the lower electrode. When plasma processing is performed on a substrate S, a potential of the lower electrode is set lower than the potential of the upper electrode while a potential of the auxiliary electrode is set lower than a potential of the upper electrode.
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