发明名称 |
METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.
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申请公布号 |
US2009197403(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
US20070302810 |
申请日期 |
2007.05.30 |
申请人 |
HONDA MINORU;SATO YOSHIHIRO;NAKANISHI TOSHIO |
发明人 |
HONDA MINORU;SATO YOSHIHIRO;NAKANISHI TOSHIO |
分类号 |
H01L21/318;H01L21/336 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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