| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device including a Pd electrode, which prevents, in a simple manner, yield deterioration resulting from sticking of the Pd electrode on a detached insulating film onto the surface of the semiconductor light-emitting device, or the occurrence of portions where pad electrodes are not formed, and avoid a contact of a p-type contact layer with the pad electrode. <P>SOLUTION: The method includes the steps of forming an insulating film having an opening on a semiconductor, forming a Pd electrode in the opening and on the insulating film, and detaching and removing the Pd electrode on the insulating film by applying a physical force to the Pd electrode on the insulating film while leaving the Pd electrode in the opening. <P>COPYRIGHT: (C)2009,JPO&INPIT |
