| 摘要 |
A nonvolatile semiconductor memory of an aspect of the present invention includes a memory cell including, a charge storage layer on a gate insulating film, a multilayer insulator on the charge storage layer, and a control gate electrode on the multilayer insulator, the gate insulating film including a first tunnel film, a first high-dielectric-constant film on the first tunnel film and offering a greater dielectric constant than the first tunnel film, and a second tunnel film on the first high-dielectric-constant film and having the same configuration as that of the first tunnel film, the multilayer insulator including a first insulating film, a second high-dielectric-constant film on the first insulating film and offering a greater dielectric constant than the first insulating film, and a second insulating film on the second high-dielectric-constant film and having the same configuration as that of the first insulating film.
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