| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which includes a stack-type ferroelectric capacitor superior in capacitor characteristics. SOLUTION: This manufacturing step includes a step, wherein an upper electrode film 24, a ferroelectric film 19 and a lower electrode film 18 are etched in a chamber 53 by using a mask 25, so as to form a capacitor 40, and the sidewall of the capacitor is over-etched in the chamber 53 which is cleaned so that the amount of adhesion of subproducts may be reduced when compared with a case of etching of the lower electrode film 19, thus increasing an angle of the sidewall of the capacitor to the bottom of the capacitor 40 after overetching, when compared with the angle before overetching. COPYRIGHT: (C)2009,JPO&INPIT
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