| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology that can carry out vacuum processing without damages. SOLUTION: A radical production apparatus 20 having an antenna 22 covered with an inner container 24 and an outer container 26 is projected into a vacuum chamber 12 from the wall surface thereof; a raw gas is introduced into a gas introduction space 30 between the inner container 24 and the outer container 26; and when a microwave is emitted by applying a high frequency voltage to the antenna 22, and a plasma is formed in the gas introduction space 30 and radicals of the raw gas are produced. A plurality of discharge holes 28 are provided in the outer container 26; and when radicals are emitted through the discharge holes 28 into the vacuum chamber 12 and arrive at the surface of a substrate 8, the substrate 8 is vacuum-processed. Since the substrate 8 is not exposed to the plasma, the substrate 8 will not be damaged. COPYRIGHT: (C)2009,JPO&INPIT
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