| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode for a nitride semiconductor capable of enhancing the reliability of an electrode in a nitride semiconductor device using a nitride semiconductor, and a nitride semiconductor device containing the same. SOLUTION: This electrode for a nitride semiconductor is an electrode formed on a nitride semiconductor and comprising a metal nitride layer formed on the nitride semiconductor, a first metal layer formed on the metal nitride layer and a second metal layer formed on the first metal layer in which the first metal layer contains an element of the same metal as a metal contained in the metal nitride layer; and this nitride semiconductor device contains this electrode for a nitride semiconductor. COPYRIGHT: (C)2009,JPO&INPIT
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