发明名称 |
Method of manufacturing nitride-based semiconductor light emitting device |
摘要 |
Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
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申请公布号 |
US7531465(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070690504 |
申请日期 |
2007.03.23 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHO JAE-HEE;SONE CHEOL-SOO;KIM DONG-YU;HONG HYUN-GI;KIM SEOK-SOON |
分类号 |
H01L21/31;H01L33/22;H01L33/36 |
主分类号 |
H01L21/31 |
代理机构 |
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