| 摘要 |
A wafer substrate, such as a silicon wafer substrate, includes at least one selectively formed substrate trench that may be filled with an isolation material to form an isolation surface. The forming process includes converting at least one silicon wall etched into the wafer substrate into a silicon dioxide wall, which in turn creates a substantially larger substrate trench in the wafer substrate. The selectively formed and substantially larger substrate trench may be filled with an isolation material, such as silicon dioxide, through at least one or both of an oxidation growth process and an oxidation deposition process.
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