| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a fuse layer capable of making a laser light irradiation range in which a normal disconnection can be made larger than that of a conventional fuse layer, and a manufacturing method thereof. SOLUTION: The semiconductor layer has a plurality of fuse layers disposed on an interlayer dielectric 3 in parallel and dummy fuse layers 15 provided between adjacent fuse layers 5 in parallel to the fuse layers 5. The dummy fuse layers 15 absorb heat energy diffused in a lateral direction during laser light irradiation for disconnecting a fuse layer 5, so damage to the adjacent fuse layers 5 can be suppressed. Further, laser light can be increased in energy and beam diameter even in a state where the fuse layers 5 are closely arranged, so the fuse layers can be stably disconnected. COPYRIGHT: (C)2009,JPO&INPIT
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