| 摘要 |
A light emitting device and manufacturing method thereof are provided to cut off the dislocation due to the difference of the lattice constant between substrate and the GaN layer by recrystallizing the semiconductor layer of the first conductivity type. The buffer layer(20) and GaN layer(30) are successively formed in the substrate(10). The amorphous GaN layer is formed by irradiating laser of the energy more than 100mJ on the surface of the GaN layer. The GaN layer is recrystallized by heat-treating the amorphous GaN layer in a temperature of 900-1200°C. The dislocation caused by the difference of the lattice constant between substrate and the GaN layer generated by the recrystallization of the GaN layer is prevented. The first electrode layer(70) is formed in the semiconductor layer of the first conductivity type. The second electrode layer(80) is formed in the semiconductor layer of the second conductive type. |
