发明名称 |
Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method |
摘要 |
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.
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申请公布号 |
US7504700(B2) |
申请公布日期 |
2009.03.17 |
申请号 |
US20050907935 |
申请日期 |
2005.04.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU WENJUAN;CHUDZIK MICHAEL P.;GLUSCHENKOV OLEG;PARK DAE-GYU;SEKIGUCHI AKIHISA |
分类号 |
H01L27/088;H01L21/3205;H01L21/4763 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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