| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a practical light emitting element using an indirect semiconductor which is inherently nonluminous. <P>SOLUTION: The light emitting element includes at least any of S, Se, Cu and Ag, and is equipped with an active layer composed of a mother body semiconductor device having a tetrahedral bond structure, an n electrode and a p electrode which turn on a current to the active layer, and has an n layer provided between the active layer and the n electrode contacting the active layer, and a p layer provided between the active layer and the p electrode contacting the active layer, wherein the n layer, the active layer, and the p layer are arranged to be in-plane, the thickness of the active layer is 5 nm or less. <P>COPYRIGHT: (C)2009,JPO&INPIT |
