发明名称 |
LITHOGRAPHIC METHOD BY ELECTRICALLY CHARGED PARTICLE BEAMS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic method to eliminate the negative effects due to deterioration of beam resolution by the space charge effect of beams shaped by first and second shaping apertures. <P>SOLUTION: The lithographic method includes a first irradiation process for irradiating a first charged particle beam having a first shape formed by passing beams through first and second shaping apertures to a sample, and a second irradiation process for irradiating a second charged particle beam having a second shape formed by passing beams through a shaping aperture made by turning respective sides of the first shape to the first beam irradiation site of the sample in an overlapping manner. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009054945(A) |
申请公布日期 |
2009.03.12 |
申请号 |
JP20070222646 |
申请日期 |
2007.08.29 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
ABE TAKAYUKI;YAMAGUCHI TETSUO;HIDE FUMIO |
分类号 |
H01L21/027;G03F7/20;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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