SEMICONDUCTOR LIGGT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor light emitting device and a manufacturing method thereof are provided to improve external quantum efficiency by forming concavo-convex on the side of a semiconductor layer with a pattern or a protrusion. A protrusion(101) is molded in a substrate. A plurality of semiconductor layers are formed on the substrate. The semiconductor layer comprises an active layer producing light with the recombination of holes and electronics. Concavo-convexes(104a,104b) are formed in the side of a plurality of semiconductor layers according to laminating direction of a plurality of semiconductor layers. The concavo-convex scatters the light generated in the active layer. The main part of the concavo-convex is formed by removing a plurality of semiconductor layers above the protrusion. A part of side of a plurality of semiconductor layers comprises a sloping surface.