| 摘要 |
<p>A thin film transistor, a fabricating method for the same, and an organic light emitting diode display device comprising the same are provided to improve the electrical characteristic including the leakage current etc by removing the metallic catalyst remaining in the channel region of the semiconductor layer. A semiconductor layer(320) is located on a substrate and is crystallized by using the metallic catalyst. A gate insulating layer(330) is located on the semiconductor layer. A gate electrode(350) is located on the gate insulating layer. An interlayer insulating film(360) is located on the gate electrode. Source/drain electrodes(391,393) are located on the interlayer insulating film and are electrically connected to the source/drain region of the semiconductor layer through a contact hole(370) which expose the constant area of source/drain regions(321,323).</p> |
