| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve problems that it is difficult to excite plasma locally since remote plasma cleaning is not a condition matching plasma excitation differently from a time of film formation, and a method using light is not suitable to a mass-production stage because of an inevitable problem which is the clouding of a detection window in a CVD process. <P>SOLUTION: An outline of the present invention is to detect the end point of the remote plasma cleaning by generating local plasma in a reaction chamber or a vacuum system for exhausting the reaction chamber by a capacity coupling type plasma excitation system, and monitoring electric characteristics of the plasma in a manufacturing method of a semiconductor integrated circuit device of repeating a step of exciting reaction gas in the reaction chamber by using the plasma to deposit a desired film, and a step of introducing cleaning gas excited in a remote plasma excitation chamber into the reaction chamber to perform the remote plasma cleaning of the reaction chamber in a non-plasma-excitation atmosphere. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
