| 摘要 |
899,735. Transistors. SONY KABUSHIKIKAISHA. June 27, 1958 [June 29, 1957], No. 17576/58. Class 37. A PNP or NPN junction transistor is formed by disposing superposed P and N layers over the junction between an N and a P type region, as shown in Fig. 2. Where, as shown, regions 1 and 2 are grown regions of P and N type conductivity, respectively, the base layer 5 of N- type, which extends mainly over the P-type layer, and the P-type layer 6 are formed by diffusion of donors and acceptors into the grown crystal face or by a combined alloying and diffusion step. Metal electrodes 3, 4 and 7 are attached to layers 1, 2 and 6, electrode 4 forming the base connection and 3 and 7 the emitter and collector or vice versa. A transistor formed in the above manner is characterized by a low base spreading resistance. |
