发明名称 Fabricating zinc oxide semiconductor using hydrolysis
摘要 A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide; (b) liquid depositing; and (c) optionally heating, wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide.
申请公布号 US7491575(B2) 申请公布日期 2009.02.17
申请号 US20060497826 申请日期 2006.08.02
申请人 XEROX CORPORATION 发明人 WU YILIANG;ONG BENG S.
分类号 H01L21/00;H01L21/16 主分类号 H01L21/00
代理机构 代理人
主权项
地址