发明名称 HEAT TREATMENT APPARATUS, HEAT TREATMENT MEMBER, AND METHOD OF MANUFACTURING HEAT TREATMENT MEMBER
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for making it unlikely that the pollution of a substrate with a metal atom diffused from the front surface of a member in a region for treating the substrate occurs, a heat treatment member, and to provide a method of manufacturing the heat treatment member. SOLUTION: The heat treatment apparatus 10 has a support tool 30 made of silicon carbide in a region for heat-treating a substrate 54. The support tool 30 is constituted by forming an SiC layer 30b on a base 30a made of silicon carbide, forming an Si film 30c on the SiC layer 30b, and allowing the Si film 30c to be changed into a silicon oxide film 30d by oxidation, exposing the SiC layer 30b by removing the silicon oxide film 30d after the Si film 30c is changed into the silicon oxide film 30d, or exposing the SiC layer 30b by removing the Si film 30c. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009032774(A) 申请公布日期 2009.02.12
申请号 JP20070193030 申请日期 2007.07.25
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAJIMA SADAO;NAKAMURA IWAO
分类号 H01L21/31;C23C16/46;H01L21/324 主分类号 H01L21/31
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