发明名称 |
ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE |
摘要 |
A line trench is formed in a dielectric layer that may contain an interlayer dielectric material. A metal liner is formed on the sidewalls and the bottom surface of the line trench. A conductive metal is deposited within a remaining portion of the line trench at least up to a top surface of the dielectric layer and planarized to form a metal line in the line trench. The metal line is recessed by a recess etch below the top surface of the dielectric layer. A dielectric line cap or a metallic line cap is formed by deposition of a dielectric cap layer or a metallic cap layer, followed by planarization of the dielectric or metallic cap layer. The dielectric line cap or the metallic line cap applies a highly compressive stress on the underlying metal line, which increases electromigration resistance of the metal line.
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申请公布号 |
US2009039512(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070835678 |
申请日期 |
2007.08.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG HAINING S.;YANG CHIH-CHAO;WONG KEITH KWONG HON |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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